[right][left]سلام دوستان عزیز
من تازه با نرم افزار hspice آشنا شدم و یه پروژه دارم که باید باهاش انجام بدم، سوال رو اینجا می گذارم و ممنون میشم اگه کسی بتونه بهم کمک کنه
من تازه با نرم افزار hspice آشنا شدم و یه پروژه دارم که باید باهاش انجام بدم، سوال رو اینجا می گذارم و ممنون میشم اگه کسی بتونه بهم کمک کنه
Problem 1:
TFT Simulation: In this problem, you will simulate an a-Si TFT (level-61 model) to get some ideas about the device. A simple model for a typical industrial a-Si is as follow:
.model atft NMOS(level=61 alphasat=0.715 defo=0.6 delta=5 emu=0.02
+ el=0.1 eps=11 epsi=4.7 gamma=0.535 gmin=1e+023 iol=2.8e-012
+ kvt=-0.01 lambda=0.001 m=1.2 muband=0.001 rd=220000 rs=220000
+ sigmao=5e-014 tnom=27 tox=3.5e-007 vaa=2400 vdsl=30 vfb=-5.38
+ vgsl=50 vmin=0.3 vo=0.29 vto=1.8 )
You can copy and paste the above text in your circuit file for your simulations. The minimum length and width (Lmin and Wmin) of the process is 10um.
A) for a device with W=100um and L=10um, find the transition frequency (fT) of the device. (Id=1uA, Vds=Vgs).
B) Design a simple common source amplifier using only TFTs with A=4and BW=5KHz. Find your swing and power consumption. VDD=15V
C) Design a ring oscillator with the a-Si TFT. Try to get the highest achievable frequency. VDD=12V. How does TFT aging changes the oscillation frequency? Investigate it using circuit simulation and analysis.
D) a-Si TFT has very large series Source/Drain contact resistors. Assume that you do have the model details but you can simulate (or measure) TFTs with different width and length. Find the series resistance of the terminals (per TFT width)
TFT Simulation: In this problem, you will simulate an a-Si TFT (level-61 model) to get some ideas about the device. A simple model for a typical industrial a-Si is as follow:
.model atft NMOS(level=61 alphasat=0.715 defo=0.6 delta=5 emu=0.02
+ el=0.1 eps=11 epsi=4.7 gamma=0.535 gmin=1e+023 iol=2.8e-012
+ kvt=-0.01 lambda=0.001 m=1.2 muband=0.001 rd=220000 rs=220000
+ sigmao=5e-014 tnom=27 tox=3.5e-007 vaa=2400 vdsl=30 vfb=-5.38
+ vgsl=50 vmin=0.3 vo=0.29 vto=1.8 )
You can copy and paste the above text in your circuit file for your simulations. The minimum length and width (Lmin and Wmin) of the process is 10um.
A) for a device with W=100um and L=10um, find the transition frequency (fT) of the device. (Id=1uA, Vds=Vgs).
B) Design a simple common source amplifier using only TFTs with A=4and BW=5KHz. Find your swing and power consumption. VDD=15V
C) Design a ring oscillator with the a-Si TFT. Try to get the highest achievable frequency. VDD=12V. How does TFT aging changes the oscillation frequency? Investigate it using circuit simulation and analysis.
D) a-Si TFT has very large series Source/Drain contact resistors. Assume that you do have the model details but you can simulate (or measure) TFTs with different width and length. Find the series resistance of the terminals (per TFT width)
دیدگاه